SK Hynix, HBM4E 12-stack samples supplied to customers
SK Hynix 6month 18next-generation AI high-bandwidth memory (HBM) HBM4E 12-stack samples to major customers. It presented specifications of up to 16Gbps per pin, 12-stack capacity of 48GB, and also reported improvements in energy efficiency and thermal characteristics.
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SK Hynix 6month 18next-generation AI high-bandwidth memory (HBM) product, HBM4E 12-stack samples to major customers. The announcement directly affects the generational shift and competitive landscape in the memory industry.
According to the company's announcement, the samples achieved speeds of up to 16Gbps per pin. 12The capacity based on 48-stacking is GB.
In the same announcement, SK Hynix said that energy efficiency improved by more than 20%. In a separate explanation, it said that thermal resistance improved by 17%, strengthening stability.
This supply follows a similar case involving Samsung Electronics. Samsung Electronics had also previously unveiled an HBM4E sample.
SK hynix explained that, by applying improved MR-MUF packaging technology, it secured capacity and efficiency in 12single-die stacking.
The company has not yet disclosed specific mass-production timing or supply schedules for individual customers.
The announcement focused on the fact of sample supplies to major customers and on technical specifications. The company said it would provide separate notice if additional disclosures are made in the future.